Monte Carlo Modeling of Wurtzite and 4H Phase Semiconducting Materials
نویسندگان
چکیده
منابع مشابه
Monte Carlo Study of Several Concrete Shielding Materials Containing Galena and Borated Minerals
Introduction: The heavyweight concretes have been widely used for constructing medical or industrial radiation facilities with photon sources. Materials and Methods: In this study, heavy concretes containing galena (PbS) and several borated minerals are proposed as suitable materials against photons. The shielding properties of 21 galena concretes containing seven borated minerals with three m...
متن کاملEfficient Monte Carlo Device Modeling
A single-particle approach to full-band Monte Carlo device simulation is presented which allows an efficient computation of drain, substrate and gate currents in deep submicron MOSFETs. In this approach, phase-space elements are visited according to the distribution of real electrons. This scheme is well adapted to a test-function evaluation of the drain current, which emphasizes regions with l...
متن کاملSensing of Methanol and Ethanol with Nano-Structured SnO2 (110) in Gas Phase: Monte Carlo Simulation
The SnO2 films deposited from inorganic precursors via sol–gel dip coating method have been found to be highly sensitive to methanol and ethanol vapor. Three dimensional nano-structure materials have attracted the attention of many researches because the possibility to apply them for near future devices in sensors, catalysis and energy related. The sensitivity and selectivity of SnO2 (110) nano...
متن کاملMonte Carlo Modeling of Dual and Triple Photon Energy Absorptiometry Technique
Introduction: Osteoporosis is a bone disease in which there is a reduction in the amount of bone mineral content leading to an increase in the risk of bone fractures. The affected individuals not only have to go through lots of pain and suffering but this disease also results in high economic costs to the society due to a large number of fractures. A timely and accurate diagnosis of this disea...
متن کاملReverse Monte Carlo modeling of amorphous silicon
An implementation of the reverse Monte Carlo algorithm is presented for the study of amorphous tetrahedral semiconductors. By taking into account a number of constraints that describe the tetrahedral bonding geometry along with the radial distribution function, we construct a model of amorphous silicon using the reverse Monte Carlo technique. Starting from a completely random configuration, we ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: VLSI Design
سال: 2001
ISSN: 1065-514X,1563-5171
DOI: 10.1155/2001/48073